Inkjet-Printed Multi-Bit Low-Voltage Fuse-Type Write-Once-Read-Many Memory Cell

摘要

Low-voltage fuse-type write-once-read-many memories were fabricated using a common material inkjet printer to form both the contact pads and the resistor tracks with the same silver ink and process settings. Based on the dependence of the fusing voltage on the length of the printed resistor track, a new cell structure was proposed to achieve multi-bit memories. The fabricated 2-b memory cell presents excellent long-term storage and operation stabilities, and 16-b memories were achieved using this cell structure with greatly saved contact pad numbers for easier external electrical connections than the conventional design. A system demonstration of using the memories was finally provided to prove the potential of this technology for practical use.