A Novel Sloped Field Plate-Enhanced Ultra-Short Edge Termination Structure

摘要

A novel sloped field plate (FP)-enhanced ultra-short edge termination structure is proposed and experimentally demonstrated. The structure features a benzocyclobutene dielectric filled trench, and is fabricated along with a high-voltage p-i-n diode. In addition, a sloped FP is put inside the trench and connected to the anode electrode. The fabricated device shows a breakdown voltage of 755 V, and is confirmed as the ideal planar junction breakdown voltage of the p-i-n diode. The proposed edge termination structure has a total width of , which is /5 the size of a conventional termination structure using the guard rings approach.