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首页> 外文期刊>Electron Device Letters, IEEE >In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates
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In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates

机译：块状GaN衬底上的原位氧化物，基于GaN中间层的垂直沟槽MOSFET（OG-FET）

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摘要

In this letter, we report on high breakdown voltage in situ oxide, GaN interlayer-based vertical trench MOSFETs (OG-FETs) on bulk GaN substrates. Following our previous work on OG-FETs on GaN on sapphire, utilizing a low damage gate-trench etch and using bulk GaN substrates, a breakdown voltage of 990 V with an ON-resistance 2.6 mQ · cm2, was achieved. Without edge termination, a high breakdown field of 1.6 MV/cm was achieved in these devices.
机译：在这封信中，我们报告了大块GaN衬底上的高击穿电压原位氧化物，基于GaN层间的垂直沟槽MOSFET（OG-FET）。继我们之前在蓝宝石上的GaN上进行OG-FET的工作之后，利用低损伤的栅沟槽蚀刻并使用块状GaN衬底，实现了990 V的击穿电压和2.6 mQ·cm2的导通电阻。在没有边缘终端的情况下，在这些器件中实现了1.6 MV / cm的高击穿场。

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  • 来源
    《Electron Device Letters, IEEE》 |2017年第3期|353-355|共3页
  • 作者

    Chirag Gupta; Cory Lund; Silvia H. Chan; Anchal Agarwal; Junquian Liu; Yuuki Enatsu; Stacia Keller; Umesh K. Mishra;

  • 作者单位

    Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA;

    Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA;

    Materials Department, University of California at Santa Barbara, Santa Barbara, CA, USA;

    Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA;

    Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA;

    Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA;

    Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA;

    Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Gallium nitride; Logic gates; Substrates; MOSFET; Electric breakdown; MOCVD;

    机译：氮化镓;逻辑门;基板;MOSFET;电击穿;MOCVD;

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