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Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
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机译:GaN块状晶体基板的制造以及在GaN块状晶体基板上形成的半导体装置
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摘要
A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.
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