首页> 外文期刊>Electron Device Letters, IEEE >Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory
【24h】

Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

机译:1T1R电阻性随机存取存储器中功能上完整的布尔逻辑

获取原文
获取原文并翻译 | 示例

摘要

Nonvolatile stateful logic through RRAM is a promising route to build in-memory computing architecture. In this letter, a logic methodology based on 1T1R structure has been proposed to implement functionally complete Boolean logics. Arbitrary logic functions could be realized in two steps: initialization and writing. An additional read step is required to read out the logic result, which is in situ stored in the nonvolatile resistive state of the memory. Cascade problem in building larger logic circuits is also discussed. Our 1T1R logic device and operation method could be beneficial for massive integration and practical application of RRAM-based logic.
机译:通过RRAM的非易失性有状态逻辑是构建内存计算架构的有前途的途径。在这封信中,已经提出了一种基于1T1R结构的逻辑方法论,以实现功能上完整的布尔逻辑。任意逻辑功能可以通过两个步骤实现:初始化和写入。需要一个额外的读取步骤来读出逻辑结果,该逻辑结果被原位存储在存储器的非易失性电阻状态中。还讨论了构建较大逻辑电路时的级联问题。我们的1T1R逻辑设备和操作方法可能有利于基于RRAM的逻辑的大规模集成和实际应用。

著录项

  • 来源
    《Electron Device Letters, IEEE》 |2017年第2期|179-182|共4页
  • 作者单位

    Wuhan National Laboratory for Optoelectronics, and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China;

    Department of Physics, National Sun Yat-Sen University, Kaohsiung, Tawan;

    Wuhan National Laboratory for Optoelectronics, and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China;

    Wuhan National Laboratory for Optoelectronics, and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China;

    Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan;

    Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan;

    Department of Physics, National Sun Yat-Sen University, Kaohsiung, Tawan;

    Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan;

    Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan;

    Wuhan National Laboratory for Optoelectronics, and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Logic gates; Logic functions; Transistors; Electrodes; Nonvolatile memory; Writing; Electric potential;

    机译:逻辑门;逻辑功能;晶体管;电极;非易失性存储器;写入;电势;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号