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Excellent Pattern Recognition Accuracy of Neural Networks Using Hybrid Synapses and Complementary Training

机译:使用混合突触和互补培训的神经网络优异的模式识别准确性

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摘要

To overcome the performance degradation in hardware neural networks (NNs) with non-ideal synapse devices, we proposed a novel neuromorphic architecture with both TiOx-based interfacial RRAM and CBRAM-based filamentary RRAM for highly accurate NN training and long-term inference reliability. We used a threshold-triggered training scheme, in which interfacial and filamentary RRAMs were programmed in a complementary fashion. This took advantage of the long retention time of the filamentary RRAM and the high-resolution, symmetric weight update in the interfacial RRAM. Additional evaluation of device parameters, such as linearity, precision, variation, and retention time, was conducted. An excellent pattern recognition accuracy of similar to 97% was achieved during training with the MNIST dataset. Thus, reliable inference accuracy after training was maintained using the filamentary RRAM.
机译:为了克服具有非理想突触装置的硬件神经网络(NNS)中的性能下降,我们提出了一种具有基于TiOx的界面RRAM和基于CBRAM的丝状RRAM的新型神经形状架构,用于高精度的NN训练和长期推理可靠性。我们使用了阈值触发的培训方案,其中界面和丝状RRAM以补充方式编程。这利用丝状RRAM的长期保留时间和界面RRAM中的高分辨率对称权重更新。进行了对器件参数的额外评估,例如线性,精度,变化和保留时间。在使用MNIST DATASET训练期间实现了类似于97%的优异模式识别精度。因此,使用丝状RRAM维护训练后的可靠推理精度。

著录项

  • 来源
    《IEEE Electron Device Letters》 |2021年第4期|609-612|共4页
  • 作者单位

    Pohang Univ Sci & Technol POSTECH Ctr Single Atom Based Semicond Device Pohang 37673 South Korea|Pohang Univ Sci & Technol POSTECH Dept Mat Sci & Engn Pohang 37673 South Korea;

    Pohang Univ Sci & Technol POSTECH Ctr Single Atom Based Semicond Device Pohang 37673 South Korea|Pohang Univ Sci & Technol POSTECH Dept Mat Sci & Engn Pohang 37673 South Korea;

    Pohang Univ Sci & Technol POSTECH Ctr Single Atom Based Semicond Device Pohang 37673 South Korea|Pohang Univ Sci & Technol POSTECH Dept Mat Sci & Engn Pohang 37673 South Korea;

    Pohang Univ Sci & Technol POSTECH Ctr Single Atom Based Semicond Device Pohang 37673 South Korea|Pohang Univ Sci & Technol POSTECH Dept Mat Sci & Engn Pohang 37673 South Korea;

    Pohang Univ Sci & Technol POSTECH Ctr Single Atom Based Semicond Device Pohang 37673 South Korea|Pohang Univ Sci & Technol POSTECH Dept Mat Sci & Engn Pohang 37673 South Korea;

    Pohang Univ Sci & Technol POSTECH Dept Mat Sci & Engn Pohang 37673 South Korea;

    Pohang Univ Sci & Technol POSTECH Ctr Single Atom Based Semicond Device Pohang 37673 South Korea|Pohang Univ Sci & Technol POSTECH Dept Mat Sci & Engn Pohang 37673 South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Crossbar array; neural networks; synapse device;

    机译:CrossBar阵列;神经网络;Synapse设备;

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