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机译:基于8层3D垂直电阻随机存取存储器的3D卷积内核功能的演示
Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;
Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;
Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;
Minist Ind & Informat Technol Elect Res Inst 5 Guangzhou 510610 Guangdong Peoples R China;
Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;
Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;
Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;
Shenzhen Univ Coll Elect & Informat Engn Shenzhen 518060 Peoples R China;
Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;
Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;
3D convolutional neural network; 3D vertical resistive random access memory; processing-in-memory;
机译:水分胁迫对HFO2 / Taox的8层3D垂直电阻随机存取存储器的影响
机译:初始突触状态对3D垂直电阻随机存取存储器(VRRAM)突触模式分类精度的影响
机译:用于3D垂直电阻式随机存取存储器的平面电极厚度缩放的实验研究
机译:用于具有3d垂直电阻切换随机存取存储器(3D VRRAM)的超维计算的设备架构协同设计
机译:DRAM / eDRAM和3D-DRAM的省电方法,利用工艺变化,温度变化,设备降级和内存访问工作负载变化,以及使用具有服务质量的3D-DRAM的创新的异构存储管理方法。
机译:神经网络系统的三维(3D)垂直电阻式随机存取存储器(VRRAM)突触
机译:基于新型多级单元电阻随机存取存储器的可重新配置物理无法解决的功能
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。