Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems

摘要

Memristor devices are generally suitable for incorporation in neuromorphic systems as synapses because they can be integrated into crossbar array circuits with high area efficiency. In the case of a two-dimensional (2D) crossbar array, however, the size of the array is proportional to the neural network’s depth and the number of its input and output nodes. This means that a 2D crossbar array is not suitable for a deep neural network. On the other hand, synapses that use a memristor with a 3D structure are suitable for implementing a neuromorphic chip for a multi-layered neural network. In this study, we propose a new optimization method for machine learning weight changes that considers the structural characteristics of a 3D vertical resistive random-access memory (VRRAM) structure for the first time. The newly proposed synapse operating principle of the 3D VRRAM structure can simplify the complexity of a neuron circuit. This study investigates the operating principle of 3D VRRAM synapses with comb-shaped word lines and demonstrates that the proposed 3D VRRAM structure will be a promising solution for a high-density neural network hardware system.