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RESISTIVE RANDOM ACCESS MEMORY DEVICE FOR 3D STACK AND MEMORY ARRAY USING THE SAME AND FABRICATION METHOD THEREOF
RESISTIVE RANDOM ACCESS MEMORY DEVICE FOR 3D STACK AND MEMORY ARRAY USING THE SAME AND FABRICATION METHOD THEREOF
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机译:使用其相同的制造方法的3D堆栈和存储器阵列的电阻式随机存取存储器
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摘要
The present invention relates to a resistance change memory, that is, a resistive memory device. By forming a bottom electrode from a doped semiconductor different material from a conventional one, it is possible to fabricate the memory device simultaneously with peripheral circuit elements. By having one or more electric field concentration regions in the bottom electrode, it is possible to reduce the power consumption reducing the voltage. The present invention can be also stacked vertically in any small and apply to the synaptic device array recently attracting the great interest as the next generation computing technology for realizing the neural imitation system.
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