机译:Algan / GaN HEMT的偏振工程,具有高线性X波段应用的分级IngaN子通道
Ohio State Univ Elect & Comp Engn Dept Columbus OH 43210 USA;
Qorvo Inc Richardson TX 75081 USA;
Qorvo Inc Richardson TX 75081 USA;
Ohio State Univ Elect & Comp Engn Dept Columbus OH 43210 USA;
Ohio State Univ Elect & Comp Engn Dept Columbus OH 43210 USA;
Ohio State Univ Elect & Comp Engn Dept Columbus OH 43210 USA;
Qorvo Inc Richardson TX 75081 USA;
Qorvo Inc Richardson TX 75081 USA;
Ohio State Univ Elect & Comp Engn Dept Columbus OH 43210 USA;
Ohio State Univ Elect & Comp Engn Dept Columbus OH 43210 USA;
Transistor linearity; graded InGaN channel; composite 2D-3D channel; polarization-graded field-effect transistor; two-tone linearity;
机译:具有梯度InGaN子沟道的AlGaN / GaN HEMT的极化工程,用于高线性X波段应用
机译:内部匹配的14.2 W / mm AlGaN / GaN HEMT,用于X波段应用
机译:适用于X波段应用的大功率单片AlGaN / GaN HEMT开关
机译:屏障层工程:E模式的性能评估INGAN / ALGAN / GAN HEMT
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:Algan / Ingan / GaN和Inaln / Ingan / GaN HEMTS的设计与分析,高功率宽带宽应用