High-power monolithic AlGaN/GaN HEMT switch for X-band applications

摘要

The design, fabrication and test of X-band high-power monolithic SPDT switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performance: they exhibit 1 dB on-state insertion loss and better than 37 dB isolation. Power-handling measurements have shown that no compression phenomenon occurs with an input power equal to 39.5 dBm at 10 GHz.