14.2 W/mm internally-matched AlGaN/GaN HEMT for X-band applications

摘要

High-performance X-band AlGaN/GaN high electron mobility transistor (HEMT) has been achieved by T-gate process in combination with source-connected field plate. Both its Schottky breakdown voltage and pinch-off breakdown voltage are higher than 100 V. Beside, excellent superimposition of direct current (DC) I-V characteristics in different Vds sweep range indicates that our GaN HEMT device is almost current collapse free. As a result, both outstanding breakdown characteristics and reduction of current collapse effect guarantee high microwave power performances. Based upon it, we have developed an internally-matched GaN HEMT amplifier with single chip of 2.5 mm gate periphery, which exhibits power density of 14.2 W/mm with 45.5 dBm (35.5 W) output power and a power added efficiency (PAE) of 48% under VdS =48 V pulse operating condition at 8 GHz. To the best of our knowledge, it is the highest power density at this power level.