Physically Transient Resistive Switching Memory With Material Implication Operation

摘要

In this letter, physically transient resistive switching devices with structure of Mg/SiO2/W for logic operation were proposed for the first time. Despite the desirable nonvolatile memory characteristics, the dissolvable memory devices could be used to achieve material implication function. Meanwhile, the transient memory arrays were transferred onto a dissolvable poly (vinyl alcohol) substrate by water-assisted transfer printing technique, and the transient system was capable of dissociating in deionized water after 20min. This transient Mg/SiO2/W device demonstrates the great potential in future in-memory logic computing systems and secure electronic applications.