Physically Transient Resistive Memory With Programmable Switching Behaviors in MgO-Mo Based Devices

摘要

In this letter, physically transient resistive memory devices based on MgO with programmable switching behaviors by embedding Mo nanolayer were proposed. The devices with a 2-3 nm Mo nanolayer (W/MgO/Mo(2-3 nm)/MgO/W) exhibit bipolar analog switching behavior and synaptic functions that are promising for neuromorphic electronics. When the Mo nanolayer is increased to 7-8 nm, complementary resistive switching (CRS) behavior is demonstrated which can be used to solve sneak current issue in crossbar array. Additionally, triggered electrical failure was achieved after immersing the devices in DI water for 4 min. This transient device with programmable switching behaviors by tuning Mo nanolayer thickness might provide guidelines to advance the security, biocompatible and implantable data storage and neuromorphic computing systems.