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Method for manufacturing a resistively switching memory cell and memory device based thereon
Method for manufacturing a resistively switching memory cell and memory device based thereon
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机译:电阻切换存储单元的制造方法以及基于该方法的存储装置
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摘要
The invention relates to a method for manufacturing at least one phase change memory cell. The method at least fabricating at least one first lamellar spacer of conductive material, which is electrically coupled to the PCM material of the memory cell; fabricating at least one second lamellar spacer on top of the first lamellar spacer, wherein the second lamellar spacer crosses the first lamellar spacer in the area of the PCM material; partially removing the first lamellar spacer, wherein the second lamellar spacer serves as a hardmask for partially removing the first lamellar spacer, so that the first lamellar spacer forms at least one electrode contacting an area of PCM material.
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