A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

摘要

A simple dual-point technique to measure the entire transfer characteristics (I-D-V-G) down to sub-threshold region in the nano-scaled MOSFET under random telegraph noise (RTN) condition with either capturing or emitting one elementary charge by a trap in the gate dielectric is proposed. Its compatibility with the commercial semiconductor analyzer makes it a readily-usable tool for future RTN study. In this letter, we use this technique to explore the VG dependence of RTN induced by a single trapped carrier in both n- and p-FETs.