Random Telegraph Noise Native Device for True Random Number Generator and Noise Injection

摘要

A method (and system) for generating random numbers includes setting a drain voltage Vd on an MOSFET (metal oxide semiconductor field effect transistor) device and a gate voltage Vg of the MOSFET device so that the MOSFET device comprises a noise source configured in a manner such as to tune as desired a random number statistical distribution of an output of the MOSFET device. An output voltage of the MOSFET is provided as an input signal into a low noise amplifier and an output voltage of the low noise amplifier provides values for a random number generator.