机译:精确测量4H-SiC光电导开关光电导性能的新方法
Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China;
Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China;
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China;
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China;
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China;
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China;
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China;
Photoconductive switch; silicon carbide; intrinsic photoconductivity; pulse-power system switches; on-state resistance;
机译:勘误表:“评估阱带碰撞电离和空穴传输对含有深缺陷的4H-SiC光电导开关的暗电流的作用” [J.应用物理120,245705(2016)]
机译:基于半绝缘体4H-SiC的本征光电导开关
机译:评估陷带效应电离和空穴传输对含有深缺陷的4H-SiC光电导开关的暗电流的作用
机译:通过泄漏电流分析来表征带隙缺陷状态,以优化4H-SiC光电导电路
机译:基于数值模拟的脉冲功率应用4H-SiC光电导开关的评估。
机译:片上皮秒脉冲检测和生成使用石墨烯光电导开关
机译:高功率和高频应用的碳化硅光电导电性能性能模型
机译:光电导开关性能研究