Erratum: 'Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects' [J. Appl. Phys. 120, 245705 (2016)]

Chowdhury A. R.; Dickens J. C.; Neuber A. A.; Joshi R. P.

首页> 外文期刊>Journal of Applied Physics >Erratum: 'Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects' [J. Appl. Phys. 120, 245705 (2016)]

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Erratum: 'Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects' [J. Appl. Phys. 120, 245705 (2016)]

机译：勘误表：“评估阱带碰撞电离和空穴传输对含有深缺陷的4H-SiC光电导开关的暗电流的作用” [J.应用物理120，245705（2016）]

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来源
《Journal of Applied Physics》 |2018年第8期|089902.1-089902.1|共1页
作者
Chowdhury A. R.; Dickens J. C.; Neuber A. A.; Joshi R. P.;
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作者单位

Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA;

Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA;

Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA;

Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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1. Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects [J] . A. R. Chowdhury, J. C. Dickens, A. A. Neuber, Journal of Applied Physics . 2016,第24期

机译：评估陷带效应电离和空穴传输对含有深缺陷的4H-SiC光电导开关的暗电流的作用
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Erratum: 'Assessing the role of trap-to-band impact ionization and hole transport on the dark currents of 4H-SiC photoconductive switches containing deep defects' [J. Appl. Phys. 120, 245705 (2016)]

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