Erratum: 'Deep level defects in n-type GaAsBi and GaAs grown at low temperatures' [J. Appl. Phys. 113,133708 (2013)]

摘要

In Ref. 1, we reported Deep Level Transient Spectroscopy (DLTS) measurements of n-type GaAsBi and GaAs layers grown by molecular beam epitaxy (MBE) at various temperatures. In the course of further work, an error in the growth temperature reported for the GaAs Schottky diode sample, discussed in Ref. 1, has come to our attention. Specifically, the growth temperature for the Schottky diode sample, referred to in Figs. 4 and 5 as GaAs-390, was actually ～465 ℃ and not 390 ℃ as indicated in the text, in Tables Ⅰ and Ⅱ, and on Fig. 2. This error does not affect the conclusions of the paper.