Integrated Power Stage Devices Are GaN Based

摘要

International Rectifier introduced a family of commercial integrated power stage products using IR's Gallium Nitride (GaN)-based power device technology platform. The iP2010 and iP2011 family is designed for multiphase and point-of-load (Pol.) applications and integrates a PowIRtune driver IC matched to a multi-switch monolithic GaN-based power device. These devices are mounted in a flip chip package platform to deliver desirable switching frequency. The iP2010 features an input voltage range of 7 V to 13.2 V and output voltage range of 0.6 V to 5.5 V with an output current up to 30 A. The device operates up to 3 MHz. Operating up to 5 MHz, the pin-compatible iP2011 features the same inputrnand output voltage range but is optimized for an output current up to 20 A. Both devicesrnare optimized for very low power loss and feature efficient dual-sided cooling.