Gan based power devices with integrated protection devices: structures and methods

摘要

Exemplary embodiments represent structures and methods hit power before the direction of which is provided with integrated clamping structures. The integration of clamps structures, the power device, for example, prior to an electrical overloading protect. In one embodiment, active devices be formed by means of a substrate, while a clamping structure outside of the active regions of the power device, for example under the active regions and / or in the substrate, can be integrated. The integration of clamps structures outside active regions of the power directions, the active region for a given chip size maximize and the robustness of the clamping device is improved, since the current by means of this integration in the substrate is propagated.