GAN BASED POWER DEVICES WITH INTEGRATED PROTECTION DEVICES STRUCTURES AND METHODS, HAVING AN INTEGRATED CLAMP STRUCTURE

摘要

PURPOSE: A GaN based power devices with integrated protection devices structures and methods is provided to protect a power device form electrical overstress by integrating the clamp structure.;CONSTITUTION: In a GaN based power devices with integrated protection devices structures and methods, a buffer layer(120) is formed on a substrate(110). An GaN layer(130) is formed on the buffer layer. The AlGaN layer(140) is formed on the GaN layer. An inheritance layer(150) is formed on the AlGaN layer. The inheritance layer is penetrated through an active area and is used as a hard mask to form a trench on a P-epi layer(114).;COPYRIGHT KIPO 2012