ECV investigation of ion-implanted photosensitive silicon structures for backside illuminated CCDs

摘要

BoronimplantedSistructuresusedinback-sideilluminatedandelectronbombardedchargecoupleddevices(CCD)wereinvestigatedbymeansofelectrochemicalcapacitance-voltage(ECV)profiling.Asetofteststructureswerespeciallyfabricatedusingvariousenergiesanddosesofboronimplantation,aswellasdifferentmaterialswereusedastheircoatinglayers:Alandsiliconoxide.Theconcentrationprofilesoffreechargecarriersacrossthesamplewereexperimentallyobtained.Further,usingPoissonequationandFredholmequationofthefirstkindthedistributionoffreechargecarrierconcentrationandelectricfieldintensityindepthofthesampleswerecalculated.Byanalyzingandcomparisonofsimulatedandexperimentallyobtainedconcentrationprofiles,therecommendationsforoptimizationofsampleparameterswereproposedaimingatincreaseofsweepingfieldanddecreaseofsurfacepotentialimpactonchargecarriertransport...