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Synthesis of ZnO Nanowires and Their Photovoltaic Application: ZnO Nanowires/AgGaSe2Thin Film Core-Shell Solar Cell

机译:ZnO纳米线的合成及其光伏应用:ZnO纳米线/ AgGaSe2薄膜核壳太阳能电池

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In this investigation, hydrothermal technique was employed for the synthesis of well-aligned dense arrays of ZnO nanowires (NWs) on a wide range of substrates including silicon, soda-lime glass (SLG), indium tin oxide, and polyethylene terephthalate (PET). Results showed that ZnO NWs can be successfully grown on any substrate that can withstand the growth temperature (~90°C) and precursor solution chemicals. Results also revealed that there was a strong impact of growth time and ZnO seed layer deposition route on the orientation, density, diameter, and uniformity of the synthesized nanowires. A core-shell n-ZnO NWs/p-AgGaSe2(AGS) thin film solar cell was fabricated as a device application of synthesized ZnO nanowires by decoration of nanowires with ~700 nm thick sputtering deposited AGS thin film layer, which demonstrated an energy conversion efficiency of 1.74% under 100 mW/cm2of simulated solar illumination.
机译:在这项研究中,采用水热技术在包括硅,钠钙玻璃(SLG),氧化铟锡和聚对苯二甲酸乙二醇酯(PET)在内的各种基板上合成了排列整齐的ZnO纳米线(NW)的致密阵列。 。结果表明,ZnO NW可以在任何能够承受生长温度(〜90°C)和前体溶液化学物质的基材上成功生长。结果还表明,生长时间和ZnO种子层沉积路径对合成纳米线的方向,密度,直径和均匀性有很大影响。通过用约700 nm厚的溅射沉积AGS薄膜层装饰纳米线,制备了核壳n-ZnO NWs / p-AgGaSe2(AGS)薄膜太阳能电池作为合成ZnO纳米线的装置应用。在100 mW / cm2的模拟太阳光照下效率为1.74%。

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