FABRICATION METHOD OF BAND-GAP ADJUSTABLE ZNO FILM AND THEIR APPLICATION FOR SOLAR CELLS

摘要

The present invention relates to a method of fabricating an N-doped ZnO film of adjusting band gap and the application for solar cells using the same. More particularly, the present invention relates to a method of fabricating a solar cell which includes a step of depositing N-doped ZnO by forming argon/nitrogen mixture gas plasma in a ZnO target; a step of controlling band gap by controlling the thickness of the N-doped ZnO thin film; and a step of depositing a N-doped CuO thin film in the upper part of the N-doped ZnO thin film. Because a ZnO film of adjusting band gap of the present invention has a function of light absorption in a wide range and the control of band gap according to thickness, it is used as a light emitting material. Also, because a solar cell which includes the N-doped ZnO thin film of the present invention provides high power conversion efficiency, it can be used as an optical device such as a solar cell, LED, etc, and a semiconductor application material.