Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

摘要

We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the additional benefit of the reaction byproduct calcium oxide being removable through a water rinse step, thus simplifying the device integration. The Ca-reduced a-IGZO showed a sheet resistance (RSHEET) value of 0.7?kΩ/sq., with molybdenum as the S/D metal. The corresponding a-IGZO TFTs exhibited good electrical properties, such as a field-effect mobility (μFE) of 12.0?cm2/(V?s), a subthreshold slope (SS?1) of 0.4?V/decade, and an on/off current ratio (ION/OFF) above 108.