首页>
外国专利>
FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE/DRAIN CONTACTS AND GATE CONTACTS POSITIONED OVER ACTIVE TRANSISTORS
FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE/DRAIN CONTACTS AND GATE CONTACTS POSITIONED OVER ACTIVE TRANSISTORS
展开▼
机译:有源晶体管上具有自对准源/漏接触和栅极接触的场效应晶体管器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of forming a transistor device is provided. The method includes forming a plurality of gate structures including a gate spacer and a gate electrode on a substrate, wherein the plurality of gate structures are separated from each other by a source/drain contact. The method further includes reducing the height of the gate electrodes to form gate troughs, and forming a gate liner on the gate electrodes and gate spacers. The method further includes forming a gate cap on the gate liner, and reducing the height of the source/drain contacts between the gate structures to form a source/drain trough. The method further includes forming a source/drain liner on the source/drain contacts and gate spacers, wherein the source/drain liner is selectively etchable relative to the gate liner, and forming a source/drain cap on the source/drain liner.
展开▼