首页> 外文OA文献 >Self-Aligned Source and Drain Contact Engineering for High Mobility III-V Transistor

【2h】

Self-Aligned Source and Drain Contact Engineering for High Mobility III-V Transistor

机译：用于高迁移率III-V晶体管的自对准源极和漏极接触工程

页面导航

著录项
相似文献
相关主题

著录项

作者
ZHANG XINGUI;
展开▼
作者单位

展开▼
年度 2012
总页数
原文格式 PDF
正文语种 en
中图分类

相似文献

外文文献
中文文献
专利

1. Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts [J] . Jenny Hu, Krishna C. Saraswat, H.-S. Philip Wong Journal of Applied Physics . 2010,第6期

机译：金属/ III-V肖特基势垒高度调整，用于非合金III-V场效应晶体管源极/漏极触点的设计
2. Low-temperature formation of source-drain contacts in self-aligned amorphous oxide thin-film transistors [J] . Manoj Nag, Robert Muller, Soeren Steudel, Journal of Information Display . 2015,第2期

机译：自对准非晶氧化物薄膜晶体管中源漏接触的低温形成
3. Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors [J] . Manoj Nag, Robert Muller, Soeren Steudel, Journal of information display . 2015,第2期

机译：自对准非晶氧化物薄膜晶体管中源漏接触的低温形成
4. III-V MOSFETs: Surface Passivation for Gate Stack, Source/Drain and Channel Strain Engineering, Self-Aligned Contact Metallization [C] . Yee-Chia Yeo, Hock-Chun Chin, Xiao Gong, International Conference on Solid-State and Integrated Circuit Technology . 2010

机译：III-V MOSFET：栅极堆叠的表面钝化，源/漏极和沟道应变工程，自对准接触金属化
5. Implant Activated Source/Drain Regions for Self-Aligned IGZO TFT [D] . Chowdhury, Rahnuma Rifat . 2019

机译：用于自对准IGZO TFT的植入活性源/漏区
6. Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors [O] . Sae-Young Hong, Hee-Joong Kim, Dae-Hwan Kim, -1

机译：自对准顶栅共面InGaZnO薄膜晶体管的横向载流子扩散和源漏串联电阻的研究
7. Contact and source/drain engineering for advanced III-V field-effect transistors [O] . KONG YU JIN EUGENE 2014

机译：先进的III-V场效应晶体管的接触和源极/漏极工程

Self-Aligned Source and Drain Contact Engineering for High Mobility III-V Transistor

著录项

相似文献

相关主题

期刊订阅