Smooth Quantum Hydrodynamic Model Simulationof the Resonant Tunneling Diode

摘要

Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunnelingdiode are presented which exhibit enhanced negative differential resistance (NDR) whencompared to simulations using the originalO(?2)QHD model. At both 300 K and 77 K,the smooth QHD simulations predict significant NDR even when the original QHDmodel simulations predict no NDR.