Investigation of Quantum Transport Phenomena in Resonant Tunneling Structures by Simulations with a Novel Quantum Hydrodynamic Transport Model

摘要

This paper describes the simulations of resonant tunneling structures with a novel quantum hydrodynamic transport model. For the simulation the device simulator SIMBA is used, which is capable to handle complex device geometries as well as several physical models represented by certain sets of partial differential equations. As a new feature the involvement of a quantum potential is implemented to include quantum mechanical transport phenomena in different quantum size devices. The coupled solution of this quantum correction potential with a hydrodynamic transport model allows to model resonant tunneling of electrons through potential barriers and particle build up in potential wells. The experimental results of a resonant tunneling structure are compared with the simulated data of the device.