Mitsubishi Electric Develops C-band Gallium Nitride High-Electron Mobility Transistors for Satellite Earth Stations

摘要

Tokyo, November 29, 2011 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today it has developed two Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) C-band (4-8GHz) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867, featuring power outputs of an industry-leading 100W and 50W, respectively, will ship on a sample basis beginning January 10, 2012. Enlarge Left: MGFC50G5867Right: MGFC47G5867 ..