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GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH DEEP IMPLANTED P-TYPE LAYERS IN SILICON CARBIDE SUBSTRATES
GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH DEEP IMPLANTED P-TYPE LAYERS IN SILICON CARBIDE SUBSTRATES
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机译:碳化硅衬底中深埋入P型层的氮化镓高电子迁移率晶体管
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摘要
The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.
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