Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers

Anna Baranska; Anna Szerling; Ewa Papis; Kamil Kosiel; Maciej Bugajski; Marek Tlaczala; Piotr Karbownik; Rafa? Jakiela; Wojciech Macherzynski

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Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers

机译：n-GaAs的低电阻欧姆接触，用于GaAs / AlGaAs量子级联激光器

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《Optica applicata》 |2009年第4期|共页
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Anna Baranska; Anna Szerling; Ewa Papis; Kamil Kosiel; Maciej Bugajski; Marek Tlaczala; Piotr Karbownik; Rafa? Jakiela; Wojciech Macherzynski;
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中图分类光学;
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1. Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers [J] . PIOTR KARBOWNIK, ANNA BARANSKA, ANNA SZERLING, Optica applicata . 2009,第4期

机译：n-GaAs的低电阻欧姆接触，用于GaAs / AlGaAs量子级联激光器
2. Ohmic contacts for room-temperature AlGaAs/GaAs quantum cascade lasers (QCL) [J] . Baranska A., Szerling A., Karbownik P., Optica applicata . 2013,第1期

机译：室温AlGaAs / GaAs量子级联激光器（QCL）的欧姆接触
3. N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs [J] . Taneja D., Sfigakis F., Croxall A. F., Semiconductor science and technology . 2016,第6期

机译：仅使用正面处理即可将N型欧姆接触应用于未掺杂的GaAs / AlGaAs量子阱：应用于双极性FET
4. Multilayer low-resistance Ge/Au/Ni/Ti/Au based ohmic contact to n-GaAs [C] . Erofeev E. V., Ishutkin S. V., Kagadei V. A., 5th European Microwave Integrated Circuits Conference . 2010

机译：与n-GaAs的多层低电阻Ge / Au / Ni / Ti / Au基欧姆接触
5. Development of nonspiking ohmic contacts to n-Ga(or Al)(0.5)In(0.5)P and low temperature processed ohmic contacts to n-GaAs via solid phase reactions [D] . Hao, Pinghai 1997

机译：通过固相反应开发与n-Ga（或Al）（0.5）In（0.5）P的不尖峰欧姆接触以及对n-GaAs进行低温处理的欧姆接触
6. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy [O] . Marcin Kurka, Michał Rygała, Grzegorz Sęk, 2020

机译：通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
7. N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: Application to ambipolar FETs [O] . Taneja D, Sfigakis F, Croxall AF, 2016

机译：仅使用正面处理即可将N型欧姆接触用于未掺杂的GaAs / AlGaAs量子阱：应用于双极性FET

Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers

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