机译:仅使用正面处理即可将N型欧姆接触应用于未掺杂的GaAs / AlGaAs量子阱:应用于双极性FET
Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;
Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;
Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;
Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England|Indian Inst Technol, Dept Phys, Bombay 400076, Maharashtra, India;
Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;
Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;
Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England|Univ Sheffield, Dept Elect & Elect Engn, Mappin St, Sheffield S1 3JD, S Yorkshire, England;
Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;
undoped; GaAs/AlGaAs; quantum wells; ohmic contacts; etching; etch profiles;
机译:n-GaAs的低电阻欧姆接触,用于GaAs / AlGaAs量子级联激光器
机译:n-GaAs的低电阻欧姆接触,用于GaAs / AlGaAs量子级联激光器
机译:用于AlGaAs / GaAs HBT的n型InGaAs的Pd / Si基欧姆接触
机译:AlGaAs / GaAs HBT的Pd / Ge / Ti / Pt和Pd / Si / Ti / Pt欧姆接触与N型InGaAs的比较
机译:通过固相反应开发与n-Ga(或Al)(0.5)In(0.5)P的不尖峰欧姆接触以及对n-GaAs进行低温处理的欧姆接触
机译:通过圆偏振光激发的自旋光电流研究无掺杂InGaAs / AlGaAs多量子阱中的自旋输运
机译:仅使用正面处理即可将N型欧姆接触用于未掺杂的GaAs / AlGaAs量子阱:应用于双极性FET