NUMERICAL INVESTIGATION OF JUNCTION TEMPERATURE EFFECT ON DC PARAMETERS OF SILICON IMPATT DEVICE

摘要

An extensive simulation is carried out to estimate the effect of junction temperature on electric field, avalanche width, breakdown voltage and efficiency based on a double iterative computer method developed on simultaneous numerical solution of Poissons equation, carrier diffusion equation, continuity equation in addition with the effect of mobile space charge subject to appropriate boundary conditions for electric field and normalized current density at depletion layer edges for Si DDR IMPATT structure designed at 94 GHz. Current density and junction temperature are varied for simulation purpose to obtain optimized device performance in continuous wave (CW) mode during steady state. It may be noted that with the increasing bias current density, space charge effect degrades performance of the device as far as breakdown voltage, avalanche width and efficiency are concerned. The simulation results presented will be useful to realize experimentally Si IMPATTs for millimeter and sub-millimeter wave bands.