Junction parameters for silicon devices characterizaton

摘要

An innovative method for device characterization is developed ot qualify microelectronic devices. The method is based on parameter extraction form the junciton I-V characteristics. Their evoluton during electrical aging and ionizing radiation experiments allows an evaluation of the magnitude of the degradation. Results obtained with commercial samples show a signature of both manufacturer and technological processes. This method is easy to implement in a control process for device characterization.