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Thermoelectric Properties of ZnxPb(1-x)Te Thin Films By Thermal Evaporation

机译:ZnxPb(1-x)Te薄膜热蒸发的热电性能

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Thin films of Zinc lead telluride (ZnxPb(1-x)Te) of solid solution with x = 0.1, 0.2, 0.3, 0.4, and 0.5 were synthesized, from the resulting ZnTe and PbTe composition used in preparation of thin films. The deposited samples were annealed and annealed samples were used for characterization. The semiconducting and thermoelectric properties of the samples were investigated by measuring electrical resistivity and Seeback coefficient in the temperature range from 300 to 473 K for annealing samples. Activation energy for charge transport have been evaluated and found in the range of 0.269 to 0.396 eV. Thermoelectric power has been measured and found to be positive indicating that the samples are p-type semiconducting material. The Xray diffraction analysis and EDAX confirmed that films are polycrystalline in nature
机译:由所得的用于制备薄膜的ZnTe和PbTe组合物合成具有x = 0.1、0.2、0.3、0.4和0.5的固溶体的碲化锌铅(ZnxPb(1-x)Te)薄膜。对沉积的样品进行退火,并将退火后的样品用于表征。通过在300至473 K的温度范围内测量样品的电阻率和Seeback系数,研究了样品的半导体和热电性能。已经评估了电荷传输的活化能,发现其范围为0.269至0.396 eV。测量了热电功率,发现其为正值,表明样品为p型半导体材料。 X射线衍射分析和EDAX证实膜本质上是多晶的

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