Structural properties and thermoelectric power of thermally evaporated InSbTe3 thin films

摘要

Stoichiometric thin films of different thickness (similar to 50 - 150 nm) of InSbTe3 were prepared by thermally evaporated Technique, onto pre-cleaned glass substrates at similar to 298 K The as deposited films were non-crystalline and the crystallinity was built on annealing at T >= 373 K. The analysis of X-ray data using a special computer program for unknown system confirmed that InSbTe3 compound has Orthorhombic structure with lattice constants a = 16.39 +/- 0.004 angstrom, b =10.21 +/- 0.0063 angstrom, c = 3.98 +/- 0.0019 angstrom, and cell volume,V = 666.64 +/- 0.0043 angstrom(3). Both dark electrical resistivity p, and thermoelectric power were measured in the temperature range (similar to 303-423K). Seebeck coefficient was found to be positive all over the temperature range, indicating that InSbTe3 films are p-type semiconducting material. Also, the variation of the mobility with the temperature has been estimated. The results interpreted according to the grain boundary potential barrier model and the present of small polaron with energy, W-P similar to 0.05 +/- 0.009 eV.