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STRUCTURAL AND THERMOELECTRIC PROPERTIES OF THERMALLY EVAPORATED PbTe THIN FILMS

机译:热蒸发PbTe薄膜的结构和热电性能

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Thin films of lead telluride (PbTe) of different thicknesses ranging between 500 ? to 2500 ? have been prepared by thermal evaporation technique onto precleaned amorphous glass substrates at room temperature. Selected virgin samples were annealed at temperature 523 K for 60 min. in vacuum (≈10-5 torr). The X-ray diffraction analysis confirmed that these annealed films are polycrystalline corresponding to the rock salt (NaCl) FCC structure. From the XRD profiles, the grain size, dislocation density, micro strain and lattice constants were calculated. Resistivity of the virgin and annealed samples was measured by four-probe technique as a function of thickness and temperature. The resistivity was measured in the temperature range of 303 K to 473 K. It was observed that for virgin samples the resistivity decreases with increasing film thickness. It shows the NTC behavior of resistivity. For the annealed PbTe films the resistivity shows dramatic change resulting in oscillatory behavior with increasing film thickness Thermoelectric power has been measured by the integral method in the same temperature range and found to be positive indicating that the samples are p-type semiconducting materials. The existence of oscillations in the thermoelectric properties for both the virgin and annealed samples is attributed to quantum size effects.
机译:碲化铅(PbTe)薄膜,其厚度范围在500至200埃之间。到2500?通过热蒸发技术在室温下将其制备到预清洁的非晶玻璃基板上。选定的原始样品在523 K的温度下退火60分钟。在真空中(≈10-5托)。 X射线衍射分析证实,这些退火的膜是对应于岩盐(NaCl)FCC结构的多晶。根据XRD图谱,计算出晶粒尺寸,位错密度,微应变和晶格常数。通过四探针技术测量原始和退火样品的电阻率,该电阻率是厚度和温度的函数。在303 K至473 K的温度范围内测量了电阻率。观察到,对于原始样品,电阻率随膜厚度的增加而降低。它显示了电阻率的NTC行为。对于退火的PbTe薄膜,电阻率显示出急剧的变化,从而随着膜厚的增加而产生振荡行为。已经通过积分方法在相同温度范围内测量了热电功率,发现其为正值,表明样品为p型半导体材料。原始样品和退火样品的热电特性均存在振荡,这归因于量子尺寸效应。

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