Stoichiometric thin films of different thickness (~50 – 150 nm) of InSbTe3were prepared by thermally evaporated technique, onto pre-cleaned glass substrates at ~ 298 K. The as-deposited films are non-crystalline and the crystallinity occurs on annealing at T ≥ 373 K. The analysis of X-ray data using a special computer program for an unknown system confirmed that InSbTe3compound has orthorhombic structure with lattice constants a = 16.39 ± 0.004 ., b = 10.21 ± 0.0063 ., c = 3.98 ± 0.0019 ., and cell volume, V = 666.64 ± 0.0043 .3. Both dark electrical resistivity ρ and thermoelectric power were measured in the temperature range (~303-423 K). Seebeck coeficient was found to be positive over entire temperature range, indicating that InSbTe3films are p-type semiconducting materials. Also, the variation of the mobility with the temperature has been estimated. The results were interpreted acording to the grain boundary potential barrier model and the presence of small polaron with energy, WP~ 0.05 ± 0.009 eV
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