Photoluminescence properties of N and B codoped fluorescent 4H-SiC and 6H-SiC single crystals

摘要

In this paper, N and B codoped 4H-SiC and 6H-SiC single crystals were prepared by physical vapour transport method and their photoluminescence properties were studied. The photoluminescence spectra, dopant concentrations, Raman spectra, and transmission spectra of these obtained crystals were characterized. It is observed that the fluorescent crystals radiate a warm white light that covers a wide band spectrum from 450 nm to 750 nm when they are excited by a 325 nm laser. The doped 4H-SiC single crystal presents a higher photoluminescence intensity and larger spectral band compared to that of doped 6H-SiC single crystal under the similar growth and measurement conditions. Further analyze by doping concentration and transmission spectra indicate that the photoluminescence property is strongly influenced by the N donor and B acceptor impurity level.