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Nitrogen and Boron Doped Diamond Like Carbon Thin Films Synthesis by Electrodeposition from Organic Liquids and Their Characterization

机译:有机液体电沉积合成氮和硼掺杂类金刚石碳薄膜及其表征

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Thin films of amorphous diamond like carbon (a:DLC) were deposited by using a novel technique. By electrodeposition from methanol-camphor solution thin a:DLC films were deposited on non-conductive glass substrates and also on high resistive Si substrates, by using a fine wire mesh electrode, at atmospheric pressure and temperature below 350 K. Thin films of a:DLC were doped by incorporation of nitrogen (a:N-DLC) and boron (a:B-DLC) using urea and boric acid with methanol-camphor solution respectively during the electrodeposition process. From transmittance measurements in the UV-VIS-NIR region, the optical energy band gap of about 1.0 eV for undoped a:DLC film, 2.12 eV for a:N-DLC and 2.0 eV for a:B-DLC films were determined. The spectra showed high transparency in the visible and NIR region. Fourier transform infrared spectroscopy (FTIR) measurements showed the appearance of various C-H and C-C bonding in the spectrum of undoped amorphous DLC film and confirmed C-N and C=N bond formation in a:N-DLC film. From the temperature variation of d.c. conductivity studies, the activation energies were determined and found to be 0.75 eV, 0.32 eV and 0.58 eV for undoped a:DLC films, a:N-DLC and a:B-DLC films respectively. Electrical resistivity at room temperature was reduced by the doping effect, from 109 Ω-cm for undoped films to 107 Ω-cm for nitrogen doped films and 108 Ω-cm for boron doped films.
机译:通过使用一种新技术,沉积了无定形钻石状碳(a:DLC)薄膜。通过使用甲醇-樟脑溶液电沉积,在大气压力和低于350 K的温度下,通过使用细金属丝网电极,在非导电玻璃基板和高电阻Si基板上沉积a:DLC薄膜。a:薄膜:在电沉积过程中,分别使用尿素和硼酸与甲醇-樟脑溶液掺入氮气(a:N-DLC)和硼(a:B-DLC)来掺杂DLC。从UV-VIS-NIR区域中的透射率测量,确定了未掺杂的a:DLC膜的约1.0eV的光能带隙,对于a:N-DLC的膜为2.12eV和对于a:B-DLC的膜为2.0eV。光谱在可见光和近红外区域显示出高透明度。傅里叶变换红外光谱(FTIR)测量显示了未掺杂非晶DLC膜光谱中各种C-H和C-C键的出现,并证实了a:N-DLC膜中C-N和C = N键的形成。从直流温度变化通过电导率研究,确定了未掺杂的a:DLC膜,a:N-DLC和a:B-DLC膜的活化能,分别为0.75 eV,0.32 eV和0.58 eV。室温下的电阻率由于掺杂效应而降低,从未掺杂的薄膜的109Ω-cm降至氮掺杂的薄膜的107Ω-cm和硼掺杂的薄膜为108Ω-cm。

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