ZnSe films were brush plated on conducting glass substrates from a solution containing ZnSO4and SeO2 .The substrate temperature was varied in the range of 30 - 85°C. 3 ml of ZnSO4(0.25M) and 3ml of SeO2(0.05M) were taken as the precursors. X-ray diffraction studies indicated cubic structure. Direct band gap of 2.51 eV was obtained from absorption measurement for the films deposited at 85°C. Electrical measurements were made on the films by providing Indium contact at the centre of the top surface of the films. The films possessed a conductivity in the range of 1000 ohm cm - 100 ohm cm as the deposition temperature increases.
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