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APPLICABILITY OF CBH MODEL IN THE A.C. CONDUCTION STUDY OF GLASSY Se100-xInx ALLOYS

机译:CBH模型在玻璃Se100-xInx合金的交流传导研究中的适用性

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Temperature and frequency dependence of a. c. conductivity have been studied in glassy Se100-xInxfor x = 10, 15 and 20. An agreement between experimental and theoretical results suggests that the a. c. conductivity behaviour of selenium-indium system can be successfully explained by correlated barrier hopping (CBH) model. The results show that bipolaron hopping dominates over single-polaron hopping in this glassy system. This is explained in terms of lower values of the maximum barrier height for single-polaron hopping. The values of the density of charged defect states N are also calculated
机译:温度和频率的依赖性C。在玻璃状的Se100-xInx中研究了x分别为10、15和20的电导率。实验和理论结果之间的一致性表明,a。 C。硒铟系统的电导率行为可以通过相关势垒跳跃(CBH)模型成功地解释。结果表明,在这种玻璃状系统中,双极子跳跃比单极子跳跃占主导。这是通过单极化子跳跃的最大势垒高度的较低值来解释的。还计算带电缺陷状态的密度N的值

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