首页> 外文期刊>Physical review >Optical properties of pseudobinary GeTe, Ge_2Sb_2Te_5, GeSb_2Te_4, GeSb_4Te_7, and Sb_2Te_3 from ellipsometry and density functional theory
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Optical properties of pseudobinary GeTe, Ge_2Sb_2Te_5, GeSb_2Te_4, GeSb_4Te_7, and Sb_2Te_3 from ellipsometry and density functional theory

机译:基于椭偏和密度泛函理论的伪二元GeTe,Ge_2Sb_2Te_5,GeSb_2Te_4,GeSb_4Te_7和Sb_2Te_3的光学性质

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We study the optical properties and the band structures of (GeTe, Sb_2Te_3) pseudobinary compounds experimentally and theoretically by using spectroscopic ellipsometry and density functional calculations. We measure the dielectric functions of (GeTe, Sb_2Te_3) pseudobinary thin films-GeTe, Ge_2Sb_2Te_5, Ge_1Sb_2Te_4, Ge_1Sb_4Te_7, and Sb_2Te_3-by using spectroscopic ellipsometry. We anneal the thin films at various temperatures. According to x-ray diffraction, the as-grown thin films are amorphous and the annealed films have metastable and stable crystalline phases. By using standard critical-point model, we obtain the accurate values of the energy gap of the amorphous phase as well as the critical-point energies of the metastable and stable crystalline thin films. The optical gap (indirect band gap) energy of the amorphous (crystalline) thin films is estimated by the equation, (αE)~(1/2)=A(E-E_(opt(ind))). As the Sb-to-Ge atomic ratio increases, the optical (band) gap energy of amorphous (crystalline) phase decreases. Standard critical-point model analysis shows several higher band gaps. The electronic band structures, the dielectric functions, and the absorption coefficients of the thin films are calculated by using density functional theory (DFT) and are compared to the measured ones. The band-structure calculations show in stable phase that GeTe, Ge_2Sb_2Te_5, and Ge_1Sb_2Te_4 have indirect gap whereas Ge_1Sb_4Te_7 and Sb_2Te_3 have direct gap. The band gaps of metastable phase have similar behavior. The measured indirect band-gap energies are compared to those of the electronic band-structure calculations. The experimental critical-point energies of the pseudobinary compounds, especially GeTe, match well to those of theoretical calculation. The DFT calculations show that the stable and metastable phases have similar dielectric functions and absorption properties, etc., because of the similarity between the lowest-energy crystal structures for both the stable and metastable phases. However, experimental results show that there exist important differences between those of the stable and metastable phases. We discuss the discrepancy in terms of insufficient ordering of vacancies in the real materials of metastable phase.
机译:我们通过椭圆偏振光谱法和密度泛函计算实验和理论上研究(GeTe,Sb_2Te_3)伪二元化合物的光学性质和能带结构。我们使用椭圆偏振光谱法测量了(GeTe,Sb_2Te_3)伪二元薄膜-GeTe,Ge_2Sb_2Te_5,Ge_1Sb_2Te_4,Ge_1Sb_4Te_7和Sb_2Te_3-的介电函数。我们在各种温度下对薄膜进行退火。根据x射线衍射,生长的薄膜是非晶态的,并且退火的膜具有亚稳态的和稳定的结晶相。通过使用标准的临界点模型,我们可以获得非晶相能隙的准确值以及亚稳和稳定的晶体薄膜的临界点能量。非晶(晶体)薄膜的光学间隙(间接带隙)能量通过等式(αE)〜(1/2)= A(E-E_(opt(ind)))估算。随着Sb / Ge原子比的增加,非晶(晶体)相的光学(带隙)能降低。标准临界点模型分析显示出一些较高的带隙。利用密度泛函理论(DFT)计算薄膜的电子能带结构,介电函数和吸收系数,并将其与测量值进行比较。能带结构计算表明,GeTe,Ge_2Sb_2Te_5和Ge_1Sb_2Te_4具有间接间隙,而Ge_1Sb_4Te_7和Sb_2Te_3具有直接间隙。亚稳相的带隙具有相似的行为。将测得的间接带隙能量与电子能带结构计算的能量进行比较。假二元化合物,特别是GeTe的实验临界点能量与理论计算非常吻合。 DFT计算表明,由于稳定​​相和亚稳相的最低能量晶体结构之间具有相似性,因此稳定相和亚稳相具有相似的介电功能和吸收特性等。但是,实验结果表明,稳定相和亚稳相之间存在重要差异。我们从亚稳相的真实材料中空位排序不足的角度讨论差异。

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