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首页> 外文期刊>Components, Packaging and Manufacturing Technology, IEEE Transactions on >Microstructural Indicators for Prognostication of Copper–Aluminum Wire Bond Reliability Under High-Temperature Storage and Temperature Humidity
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Microstructural Indicators for Prognostication of Copper–Aluminum Wire Bond Reliability Under High-Temperature Storage and Temperature Humidity

机译:高温储存和温度湿度下铜-铝丝键合可靠性预后的微观结构指标

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摘要

Gold wire bonding has been widely used as the first-level interconnect in semiconductor packaging. The increase in the gold price has motivated the industry search for an alternative to the gold wire used in wire bonding and the transition to a copper wire bonding technology. Potential advantages of transition to a Cu–Al wire bond system include low cost of copper wire, lower thermal resistivity, lower electrical resistivity, higher deformation strength, damage during ultrasonic squeeze, and stability compared with gold wire. However, the transition to the copper wire brings along some tradeoffs, including poor corrosion resistance, narrow process window, higher hardness, and potential for cratering. Formation of excessive Cu–Al intermetallics may increase the electrical resistance and reduce the mechanical bonding strength. Current state of the art for studying the Cu–Al system focuses on the accumulation of statistically significant number of failures under accelerated testing. In this paper, a new approach has been developed to identify the occurrence of impending apparently random defect fall-outs and premature failures observed in the Cu–Al wire bond system. The use of intermetallic thickness, composition, and corrosion as a leading indicator of failure for the assessment of the remaining useful life for Cu–Al wire bond interconnects has been studied under exposure to high temperature. Damage in the wire bonds has been studied using an X-ray micro-Computed Tomography (CT). Microstructure evolution was studied under the isothermal aging conditions of 150 °C, 175 °C, and 200 °C until failure. Activation energy was calculated using the growth rate of intermetallic at different temperatures. An effect of temperature and humidity on a Cu–Al wire bond system was studied using the Parr bomb technique at different elevated temperature and humidity conditions (110 °C/100%RH, 120 °C/100&- x0025;RH, and 130 °C/100%RH), and a failure mechanism was developed. The present methodology uses the evolution of the intermetallic compound thickness and composition in conjunction with the Levenberg–Marquardt algorithm to identify accrued damage in wire bond subjected to thermal aging. The proposed method can be used for a quick assessment of Cu–Al parts to ensure manufactured part consistency through sampling.
机译:金线键合已被广泛用作半导体封装中的第一级互连。黄金价格的上涨促使行业寻求替代用于引线键合的金线以及向铜线键合技术的过渡。与金线相比,过渡到Cu-Al线键合系统的潜在优势包括低成本的铜线,较低的热阻,较低的电阻率,较高的变形强度,超声波挤压时的损坏以及稳定性。但是,向铜线的过渡会带来一些折衷,包括较差的耐腐蚀性,较窄的工艺窗口,较高的硬度和潜在的缩孔。过量的Cu-Al金属间化合物的形成可能会增加电阻并降低机械结合强度。目前研究Cu-Al系统的最新技术重点是在加速测试下累积大量具有统计意义的故障。在本文中,已经开发出一种新的方法来识别在铜铝焊线系统中观察到的明显随机缺陷的出现和过早失效的发生。在暴露于高温下,已经研究了使用金属间化合物的厚度,成分和腐蚀作为失败的主要指标来评估Cu-Al引线键合互连的剩余使用寿命。已经使用X射线微计算机断层扫描(CT)研究了引线键合中的损坏。研究了在150°C,175°C和200°C等温老化条件下直至失效的微观组织演变。使用金属间化合物在不同温度下的增长率来计算活化能。在不同的高温和湿度条件下(110°C / 100%RH,120°C / 100&-x0025; RH和130°C),使用Parr炸弹技术研究了温度和湿度对Cu-Al引线键合系统的影响。 C / 100%RH),并建立了故障机理。本方法结合Levenberg-Marquardt算法结合金属间化合物厚度和成分的演变来确定经受热老化的引线键合中产生的损坏。所建议的方法可用于快速评估Cu-Al零件,以确保通过采样来确保制造零件的一致性。

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