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Prognostication of copper-aluminum wirebond reliability under high temperature storage and temperature-humidity

机译:高温存储和高湿条件下铜铝引线键合可靠性的预测

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Gold wire bonding has been widely used as first-level interconnect in semiconductor packaging. The increase in the gold price has motivated the industry search for alternative to the gold wire used in wire bonding and the transition to copper wire bonding technology. Potential advantages of transition to Cu-Al wire bond system includes low cost of copper wire, lower thermal resistivity, lower electrical resistivity, higher deformation strength, damage during ultrasonic squeeze, and stability compared to gold wire. However, the transition to the copper wire brings along some trade-offs including poor corrosion resistance, narrow process window, higher hardness, and potential for cratering. Formation of excessive Cu-Al intermetallics may increase electrical resistance and reduce the mechanical bonding strength. Current state-of-art for studying the Cu-Al system focuses on accumulation of statistically significant number of failures under accelerated testing. In this paper, a new approach has been developed to identify the occurrence of impending apparently-random defect fall-outs and pre-mature failures observed in the Cu-Al wirebond system. The use of intermetallic thickness, composition and corrosion as a leading indicator of failure for assessment of remaining useful life for Cu-al wirebond interconnects has been studied under exposure to high temperature and temperature-humidity. Damage in wire bonds has been studied using x-ray Micro-CT. Microstructure evolution was studied under isothermal aging conditions of 150°C, 175°C, and 200°C till failure. Activation energy was calculated using growth rate of intermetallic at different temperatures. Effect of temperature and humidity on Cu-Al wirebond system was studied using Parr Bomb technique at different elevated temperature and humidity conditions (110°C/100%RH, 120°C/100%RH, 130°C/100%RH) and failure mechanism was developed. The present methodology uses evolution of t- e IMC thickness, composition in conjunction with the Levenberg-Marquardt algorithm to identify accrued damage in wire bond subjected to thermal aging. The proposed method can be used for quick assessment of Cu-Al parts to ensure manufactured part consistency through sampling.
机译:金线键合已被广泛用作半导体封装中的第一级互连。黄金价格的上涨促使业界寻求替代用于引线键合的金线以及向铜线键合技术的过渡。与金线相比,过渡到Cu-Al线键合系统的潜在优势包括低成本的铜线,较低的热阻,较低的电阻率,较高的变形强度,超声挤压过程中的损坏以及稳定性。但是,向铜线的过渡会带来一些折衷,包括较差的耐腐蚀性,较窄的工艺窗口,较高的硬度和潜在的缩孔。形成过量的Cu-Al金属间化合物可能会增加电阻并降低机械结合强度。目前研究Cu-Al系统的最新技术集中于在加速测试下累积大量具有统计意义的故障。在本文中,已经开发出一种新的方法来识别在Cu-Al引线键合系统中观察到的明显随机缺陷的出现和过早失效的发生。在暴露于高温和高温高湿的条件下,已经研究了使用金属间厚度,成分和腐蚀作为失效的主要指标来评估Cu-al引线键合互连的剩余使用寿命。已经使用X射线Micro-CT研究了引线键合中的损坏。研究了在150°C,175°C和200°C等温老化条件下直至失效的微观组织演变。使用金属间化合物在不同温度下的生长速率来计算活化能。在不同的高温高湿条件下(110°C / 100%RH,120°C / 100%RH,130°C / 100%RH)和高温条件下,使用Parr Bomb技术研究了温度和湿度对Cu-Al引线键合系统的影响。开发了故障机制。本方法论结合了IMC厚度,成分和Levenberg-Marquardt算法的发展,以识别遭受热老化的引线键合中应计的损坏。所提出的方法可用于快速评估Cu-Al零件,以确保通过采样确保制造零件的一致性。

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