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A New Method for Design of CNFET-Based Quaternary Circuits

机译:基于CNFET的四元电路设计的新方法

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In this paper, a new method for designing quaternary circuits in carbon nanotube field-effect transistor (CNFET) technology is proposed. Beyond many advantages of multi-valued logics (MVLs), the conversion of bits of a byte between quaternary and binary logic is easy and can be done independently. Therefore, this logic can be used effectively for wholly quaternary circuit design or beside binary logic as part of a great digital system. Thanks to particular capabilities of CNFET technology, proposed designs are implemented in this technology. These complementary symmetric gates are merely made by transistors and require only one supply voltage in addition to ground level. The proposed design for implementing standard quaternary inverter (SQI) generates three inherently binary inverters in quaternary logic as well: positive quaternary inverter (PQI), negative quaternary inverter (NQI) and symmetric quaternary inverter (SyQI). Based on the proposed design, new quaternary NAND (QNAND) and quaternary NOR (QNOR) gates are presented as well. These gates could be used as fundamental blocks for implementing complex digital circuits. QNAND and QNOR may be designed to adopt up to four inputs; however, in general applications, designs with two inputs are used. Proposed gates are simulated by means of Synopsys HSPICE tool with the standard 32nm CNFET Stanford model, and performance parameters including maximum delay time, average power and energy consumption are extracted and compared with the simulation results of the state-of-the-art designs. The results indicate priority of proposed designs such that the delay time and energy consumption are roughly equal or less than half and one-third of other presented designs, respectively. Moreover, the voltage transfer curve (VTC) of proposed gates demonstrates the proper noise margin values from 90mV up to 113mV for different gates. For evaluating stability and robustness of these gates, more simulations are carried out by considering process deviations in which the proposed designs demonstrate proper performance among all in the most simulations.
机译:本文提出了一种在碳纳米管场效应晶体管(CNFET)技术中设计四级电路的新方法。除了多值逻辑(MVL)的许多优点之外,四进制和二进制逻辑之间的字节位转换也很容易,并且可以独立完成。因此,该逻辑可有效地用于整个四进制电路设计,或作为大型数字系统的一部分而用于二进制逻辑。由于CNFET技术的特殊功能,该技术中实现了建议的设计。这些互补对称门仅由晶体管制成,除接地电平外仅需要一个电源电压。为实现标准四元反相器(SQI)而提出的设计方案还生成了三元逻辑中的三个固有二进制反相器:正四元反相器(PQI),负四元反相器(NQI)和对称四元反相器(SyQI)。基于提出的设计,还提出了新的四级与非(QNAND)和四级NOR(QNOR)门。这些门可以用作实现复杂数字电路的基本模块。 QNAND和QNOR可能被设计为采用多达四个输入。但是,在一般应用中,使用具有两个输入的设计。利用Synopsys HSPICE工具和标准的32nm CNFET Stanford模型对拟议的门进行了仿真,并提取了包括最大延迟时间,平均功率和能耗在内的性能参数,并将其与最新设计的仿真结果进行了比较。结果表明,建议设计的优先级,使得延迟时间和能耗分别大致等于或小于其他现有设计的一半和三分之一。此外,提出的门的电压传输曲线(VTC)证明了从90mV到113mV的不同门的合适噪声容限值。为了评估这些门的稳定性和鲁棒性,通过考虑工艺偏差来进行更多的仿真,其中所提出的设计在大多数仿真中都显示出适当的性能。

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