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A New Method for Design of CNFET-Based Quaternary Circuits

机译:基于CNFET的四元电路设计一种新方法

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In this paper, a new method for designing quaternary circuits in carbon nanotube field-effect transistor (CNFET) technology is proposed. Beyond many advantages of multi-valued logics (MVLs), the conversion of bits of a byte between quaternary and binary logic is easy and can be done independently. Therefore, this logic can be used effectively for wholly quaternary circuit design or beside binary logic as part of a great digital system. Thanks to particular capabilities of CNFET technology, proposed designs are implemented in this technology. These complementary symmetric gates are merely made by transistors and require only one supply voltage in addition to ground level. The proposed design for implementing standard quaternary inverter (SQI) generates three inherently binary inverters in quaternary logic as well: positive quaternary inverter (PQI), negative quaternary inverter (NQI) and symmetric quaternary inverter (SyQI). Based on the proposed design, new quaternary NAND (QNAND) and quaternary NOR (QNOR) gates are presented as well. These gates could be used as fundamental blocks for implementing complex digital circuits. QNAND and QNOR may be designed to adopt up to four inputs; however, in general applications, designs with two inputs are used. Proposed gates are simulated by means of Synopsys HSPICE tool with the standard 32nm CNFET Stanford model, and performance parameters including maximum delay time, average power and energy consumption are extracted and compared with the simulation results of the state-of-the-art designs. The results indicate priority of proposed designs such that the delay time and energy consumption are roughly equal or less than half and one-third of other presented designs, respectively. Moreover, the voltage transfer curve (VTC) of proposed gates demonstrates the proper noise margin values from 90mV up to 113mV for different gates. For evaluating stability and robustness of these gates, more simulations are carried out by considering process deviations in which the proposed designs demonstrate proper performance among all in the most simulations.
机译:在本文中,提出了一种在碳纳米管场效应晶体管(CNFET)技术中设计四元电路的新方法。除了多价逻辑(MVL)的许多优点之外,四季和二进制逻辑之间的字节的比特转换很容易,并且可以独立完成。因此,该逻辑可以有效地用于全部四季电路设计或二进制逻辑作为伟大数字系统的一部分。由于CNFET技术的特殊功能,在这项技术中实施了所提出的设计。这些互补对称栅极仅由晶体管制造,并且除了地面之外还需要一个电源电压。实施标准四元逆变器(SQI)的所提出的设计在第四纪逻辑中产生了三个固有的二进制逆变器:正季逆变器(PQI),负四元逆变器(NQI)和对称四季逆变器(SYQI)。基于所提出的设计,还提出了新的第四纪NAND(QNAND)和第四纪,也不是(QNOR)盖茨。这些门可以用作实现复杂数字电路的基本块。 QNAND和QNOR可能旨在采用多达四个输入;但是,在一般应用中,使用具有两个输入的设计。通过Synopsys HSPICE工具模拟所提出的栅极,标准32nm CNFET斯坦福模型,以及提取包括最大延迟时间,平均功率和能耗的性能参数,并与最先进的设计的仿真结果进行了比较。结果表明所提出的设计的优先级,使得延迟时间和能量消耗分别大致相等或不到其他呈现设计的一半和三分之一。此外,所提出的栅极的电压传输曲线(VTC)向不同门的90mV达到了高达113mV的适当噪声裕度值。为了评估这些门的稳定性和鲁棒性,通过考虑所提出的设计在最多模拟中表现出适当的性能的过程偏差来执行更多的模拟。

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